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http://www.planetgamecube.com/newsArt.cfm?artid=11735
MoSys Providing Memory for Wii
06/19/2006 9:54:53
Source: MoSys Press Release
It's 1T-SRAM again, but they don't say how much.
MoSys' 1T-SRAM(R) Embedded Memory Technology Enables Nintendo's Next
Leap in Video Games; High Performance, High Density 1T-SRAM Powers
Upcoming Wii Home Game Console
SUNNYVALE, Calif.--(BUSINESS WIRE)--June 19, 2006--MoSys, Inc., the
industry's leading provider of high-density system-on-chip (SoC)
embedded memory solutions, today announced that Nintendo's upcoming
Wii(TM) video game console uses MoSys' patented 1T-SRAM technology to
implement the very high performance memory within the Wii console's
graphics system.
This is the latest result from the more than six-years-long technical
collaboration between the two companies. Previous generations of MoSys'
1T-SRAM technology were incorporated in Nintendo's earlier game
console, the Nintendo GameCube(TM), in 1999, and shipped in
multi-million quantities. The newest 1T-SRAM implementations embedded
within the Wii console are fabricated using NEC Electronics' advanced
90nm CMOS-compatible embedded DRAM process technology. These high speed
and ultra low latency memories are used as the main embedded memory on
the graphics chip and in an additional external memory chip.
"We are pleased that Nintendo has again chosen our 1T-SRAM to power
their latest generation game console," said Chet Silvestri, chief
executive officer at MoSys, Inc.
"Designing the Wii console required an incredible list of breakthroughs
in technology and innovation. The performance delivered by MoSys'
1T-SRAM technology is an important element of our solution," said Genyo
Takeda, Senior Managing Director, General Manager, Integrated Research
& Development Division at Nintendo. "The graphic performance of Wii
benefits from MoSys' ability to develop highly innovative and
dependable embedded memory products."
About 1T-SRAM
Available in densities up to 600Mbits, MoSys' patented 1T-SRAM
technology represents the most advanced embedded memory technology in
the world. It uses a single transistor cell to achieve its exceptional
density while maintaining the refresh-free interface and low latency
random memory access cycle time associated with traditional
six-transistor SRAM cells. Embedded 1T-SRAM allows designers to get
beyond the density limits of six-transistor SRAMs; it also reduces much
of the circuit complexity and extra cost associated with using embedded
DRAM. 1T-SRAM memories can be fabricated in either pure logic or
embedded memory processes using as little as one fifth of the area of
traditional six-transistor SRAM cores. In addition to the exceptional
performance and density, this technology offers dramatic power
consumption savings by using only a quarter of the power of traditional
SRAM memories. 1T-SRAM technology is volume production proven in across
multiple silicon processing generations and supported by a wide number
of pure-play wafer foundries and independent Device Manufactures
(IDMs).
http://www.planetgamecube.com/newsArt.cfm?artid=11735
http://ir.mosysinc.com/phoenix.zhtml?c=123322&p=irol-newsArticle&ID=873477&highlight=
MoSys Providing Memory for Wii
06/19/2006 9:54:53
Source: MoSys Press Release
It's 1T-SRAM again, but they don't say how much.
MoSys' 1T-SRAM(R) Embedded Memory Technology Enables Nintendo's Next
Leap in Video Games; High Performance, High Density 1T-SRAM Powers
Upcoming Wii Home Game Console
SUNNYVALE, Calif.--(BUSINESS WIRE)--June 19, 2006--MoSys, Inc., the
industry's leading provider of high-density system-on-chip (SoC)
embedded memory solutions, today announced that Nintendo's upcoming
Wii(TM) video game console uses MoSys' patented 1T-SRAM technology to
implement the very high performance memory within the Wii console's
graphics system.
This is the latest result from the more than six-years-long technical
collaboration between the two companies. Previous generations of MoSys'
1T-SRAM technology were incorporated in Nintendo's earlier game
console, the Nintendo GameCube(TM), in 1999, and shipped in
multi-million quantities. The newest 1T-SRAM implementations embedded
within the Wii console are fabricated using NEC Electronics' advanced
90nm CMOS-compatible embedded DRAM process technology. These high speed
and ultra low latency memories are used as the main embedded memory on
the graphics chip and in an additional external memory chip.
"We are pleased that Nintendo has again chosen our 1T-SRAM to power
their latest generation game console," said Chet Silvestri, chief
executive officer at MoSys, Inc.
"Designing the Wii console required an incredible list of breakthroughs
in technology and innovation. The performance delivered by MoSys'
1T-SRAM technology is an important element of our solution," said Genyo
Takeda, Senior Managing Director, General Manager, Integrated Research
& Development Division at Nintendo. "The graphic performance of Wii
benefits from MoSys' ability to develop highly innovative and
dependable embedded memory products."
About 1T-SRAM
Available in densities up to 600Mbits, MoSys' patented 1T-SRAM
technology represents the most advanced embedded memory technology in
the world. It uses a single transistor cell to achieve its exceptional
density while maintaining the refresh-free interface and low latency
random memory access cycle time associated with traditional
six-transistor SRAM cells. Embedded 1T-SRAM allows designers to get
beyond the density limits of six-transistor SRAMs; it also reduces much
of the circuit complexity and extra cost associated with using embedded
DRAM. 1T-SRAM memories can be fabricated in either pure logic or
embedded memory processes using as little as one fifth of the area of
traditional six-transistor SRAM cores. In addition to the exceptional
performance and density, this technology offers dramatic power
consumption savings by using only a quarter of the power of traditional
SRAM memories. 1T-SRAM technology is volume production proven in across
multiple silicon processing generations and supported by a wide number
of pure-play wafer foundries and independent Device Manufactures
(IDMs).
http://www.planetgamecube.com/newsArt.cfm?artid=11735
http://ir.mosysinc.com/phoenix.zhtml?c=123322&p=irol-newsArticle&ID=873477&highlight=